Tunneling-injection quantum-dot laser: ultrahigh temperature stability
نویسندگان
چکیده
منابع مشابه
Tunneling-Injection Quantum-Dot Laser: Ultrahigh Temperature Stability
We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is based on direct injection of carriers into the QDs, resulting in a strong depletion of minority carriers in the regions outside the QDs. Recombination in these regions, which is the dominant source of the temperature dependence, is thereby suppressed, raising the characteristic temperature 0 above 1500 K. Sti...
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Different approaches to the design of a genuinely temperature-insensitive quantum dot (QD) laser are proposed. Suppression of the parasitic recombination outside the QDs, which is the dominant source of the temperature dependence of the threshold current in the conventional design of a QD laser, is accomplished either by tunneling injection of carriers into the QDs or by band-gap engineering. E...
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In this paper, modulation bandwidth characteristics of InGaAs/GaAs quantum dot (QD) laser were theoretically investigated. Simulation was done by using the fourth order Runge-Kutta method. Effect of carrier relaxation life time, temperature and current density on characteristics of tunneling injection QD laser (TIL) and conventional QD laser (CL) were analyzed. Results showed that tunneling inj...
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ژورنال
عنوان ژورنال: IEEE Journal of Quantum Electronics
سال: 2001
ISSN: 0018-9197
DOI: 10.1109/3.929590